HN1B04FE-GR,LF

Toshiba Semiconductor and Storage

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Product Overview

Part Number:	HN1B04FE-GR,LF
Manufacturer/Brand:	Toshiba Semiconductor and Storage
Product description	TRANS NPN/PNP 50V 0.15A ES6
Datasheets:	HN1B04FE-GR,LF.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	1132112 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 1132112 pcs

Reference Price (In US Dollars)

1 pcs: $0.121

10 pcs: $0.109

25 pcs: $0.079

100 pcs: $0.061

250 pcs: $0.039

500 pcs: $0.033

1000 pcs: $0.022

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Total:$0.121

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Specifications of HN1B04FE-GR,LF

Part Number	HN1B04FE-GR,LF	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS NPN/PNP 50V 0.15A ES6	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	1132112 pcs	Data sheet	HN1B04FE-GR,LF.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA
Transistor Type	NPN, PNP	Supplier Device Package	ES6
Series	-	Power - Max	100mW
Packaging	Original-Reel®	Package / Case	SOT-563, SOT-666
Other Names	HN1B04FE-GR(5LFTDKR HN1B04FE-GR(5LFTDKR-ND HN1B04FE-GRLF(TDKR HN1B04FE-GRLF(TDKR-ND HN1B04FE-GRLFDKR	Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	16 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	80MHz	Detailed Description	Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 80MHz 100mW Surface Mount ES6
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA, 6V	Current - Collector Cutoff (Max)	100nA (ICBO)
Current - Collector (Ic) (Max)	150mA

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HN1B04FE-GR,LF

Product Overview

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Specifications of HN1B04FE-GR,LF

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