Toshiba launches two 80V N-channel power mosfets
The devices are said to be suited to power applications where low-loss operation is important, including ac-dc and dc-dc conversion in data centres and communication base stations as well as motor drive equipment.
Both the TPH2R408QM and TPN19008QM exhibit a reduction of around 40% in drain-source on-resistance (RDS(ON)) compared to corresponding 80V products in earlier processes such as U-MOSVIII-H, Toshiba claims.
The TPN19008QM has an RDS(ON) value of 19mΩ (max.) while the TPH2R408QM value is 2.43mΩ.
The company says it has optimised the device structure, improving the trade-off between RDS(ON) and gate charge characteristics by up to 15% and the trade-off between RDS(ON) and output charge by 31%.
The mosfets are housed in surface mount packages and rated for a drain-source voltage of 80V.
They operate at channel temperatures up to 175ºC.
The TPN19008QM is rated for a drain current of 34A and is housed in a 3.3×3.3mm TSON package while the TPH2R408QM is rated for 120A and housed in a 5x6mm SOP package.