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HomeProductsDiscrete Semiconductor ProductsTransistors - Bipolar (BJT) - ArraysHN1B01FU-GR,LF

HN1B01FU-GR,LF

Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
HN1B01FU-GR,LF Image
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Product Overview

Part Number: HN1B01FU-GR,LF
Manufacturer/Brand: Toshiba Semiconductor and Storage
Product description TRANS NPN/PNP 50V 0.15A US6-PLN
Datasheets: HN1B01FU-GR,LF.pdf
RoHs Status Lead free / RoHS Compliant
Stock Condition 1030922 pcs stock
Ship From Hong Kong
Shipment Way DHL/Fedex/TNT/UPS/EMS
In Stock 1030922 pcs
Reference Price (In US Dollars)
3000 pcs
$0.022
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Specifications of HN1B01FU-GR,LF

Part Number HN1B01FU-GR,LF Manufacturer Toshiba Semiconductor and Storage
Description TRANS NPN/PNP 50V 0.15A US6-PLN Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 1030922 pcs Data sheet HN1B01FU-GR,LF.pdf
Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Transistor Type NPN, PNP Supplier Device Package US6
Series - Power - Max 200mW, 210mW
Packaging Tape & Reel (TR) Package / Case 6-TSSOP, SC-88, SOT-363
Other Names HN1B01FU-GR(L,F,T)
HN1B01FU-GR,LF(B
HN1B01FU-GR,LF(T
HN1B01FU-GRLF
HN1B01FU-GRLF-ND
HN1B01FU-GRLFTR
HN1B01FUGRLFT
HN1B01FUGRLFTTR
HN1B01FUGRLFTTR-ND		 Operating Temperature 125°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 12 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 150MHz Detailed Description Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 150MHz 200mW, 210mW Surface Mount US6
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 150mA

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