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TSM2N60SCW RPG

TSC (Taiwan Semiconductor)TSC (Taiwan Semiconductor)
TSM2N60SCW RPG Image
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Product Overview

Part Number: TSM2N60SCW RPG
Manufacturer/Brand: TSC (Taiwan Semiconductor)
Product description MOSFET N-CH 600V 600MA SOT223
Datasheets: TSM2N60SCW RPG.pdf
RoHs Status Lead free / RoHS Compliant
Stock Condition 199785 pcs stock
Ship From Hong Kong
Shipment Way DHL/Fedex/TNT/UPS/EMS
In Stock 199785 pcs
Reference Price (In US Dollars)
1 pcs
$0.285
10 pcs
$0.248
100 pcs
$0.191
500 pcs
$0.142
1000 pcs
$0.113
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Specifications of TSM2N60SCW RPG

Part Number TSM2N60SCW RPG Manufacturer TSC (Taiwan Semiconductor)
Description MOSFET N-CH 600V 600MA SOT223 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 199785 pcs Data sheet TSM2N60SCW RPG.pdf
Vgs(th) (Max) @ Id 4V @ 250µA Vgs (Max) ±30V
Technology MOSFET (Metal Oxide) Supplier Device Package SOT-223
Series - Rds On (Max) @ Id, Vgs 5 Ohm @ 600mA, 10V
Power Dissipation (Max) 2.5W (Tc) Packaging Cut Tape (CT)
Package / Case TO-261-4, TO-261AA Other Names TSM2N60SCW RPGCT
TSM2N60SCW RPGCT-ND
TSM2N60SCWRPGCT
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 3 (168 Hours) Manufacturer Standard Lead Time 22 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 435pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V Detailed Description N-Channel 600V 600mA (Tc) 2.5W (Tc) Surface Mount SOT-223
Current - Continuous Drain (Id) @ 25°C 600mA (Tc)

Shipment

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FEDEX www.FedEx.com From $35.00 basic shipping fee depend on zone and country.
DHL www.DHL.com From $35.00 basic shipping fee depend on zone and country.
UPS www.UPS.com From $35.00 basic shipping fee depend on zone and country.
TNT www.TNT.com From $35.00 basic shipping fee depend on zone and country.

★ Delivery time will need 2-4 Days to most of country all over the world by DHL/UPS/FEDEX/TNT.

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