HGTD3N60C3S9A

AMI Semiconductor / ON Semiconductor

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Product Overview

Part Number:	HGTD3N60C3S9A
Manufacturer/Brand:	AMI Semiconductor / ON Semiconductor
Product description	IGBT 600V 6A 33W TO252AA
Datasheets:	HGTD3N60C3S9A.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	4462 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 4462 pcs

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Specifications of HGTD3N60C3S9A

Part Number	HGTD3N60C3S9A	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	IGBT 600V 6A 33W TO252AA	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4462 pcs	Data sheet	HGTD3N60C3S9A.pdf
Voltage - Collector Emitter Breakdown (Max)	600V	Vce(on) (Max) @ Vge, Ic	2V @ 15V, 3A
Test Condition	480V, 3A, 82 Ohm, 15V	Td (on/off) @ 25°C	-
Switching Energy	85µJ (on), 245µJ (off)	Supplier Device Package	TO-252AA
Series	-	Power - Max	33W
Packaging	Tape & Reel (TR)	Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature	-40°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Type	Standard	IGBT Type	-
Gate Charge	10.8nC	Detailed Description	IGBT 600V 6A 33W Surface Mount TO-252AA
Current - Collector Pulsed (Icm)	24A	Current - Collector (Ic) (Max)	6A

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HGTD3N60C3S9A

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Specifications of HGTD3N60C3S9A

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