HGT1S2N120CN

AMI Semiconductor / ON Semiconductor

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Product Overview

Part Number:	HGT1S2N120CN
Manufacturer/Brand:	AMI Semiconductor / ON Semiconductor
Product description	IGBT 1200V 13A 104W I2PAK
Datasheets:	HGT1S2N120CN.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	4978 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 4978 pcs

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Specifications of HGT1S2N120CN

Part Number	HGT1S2N120CN	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	IGBT 1200V 13A 104W I2PAK	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4978 pcs	Data sheet	HGT1S2N120CN.pdf
Voltage - Collector Emitter Breakdown (Max)	1200V	Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 2.6A
Test Condition	960V, 2.6A, 51 Ohm, 15V	Td (on/off) @ 25°C	25ns/205ns
Switching Energy	96µJ (on), 355µJ (off)	Supplier Device Package	TO-262
Series	-	Power - Max	104W
Packaging	Tube	Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Type	Standard	IGBT Type	NPT
Gate Charge	30nC	Detailed Description	IGBT NPT 1200V 13A 104W Through Hole TO-262
Current - Collector Pulsed (Icm)	20A	Current - Collector (Ic) (Max)	13A

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HGT1S2N120CN

Product Overview

Specifications of HGT1S2N120CN

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