Part Number | FQT7N10TF | Manufacturer | AMI Semiconductor / ON Semiconductor |
---|---|---|---|
Description | MOSFET N-CH 100V 1.7A SOT-223 | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 220064 pcs | Data sheet | 1.FQT7N10TF.pdf2.FQT7N10TF.pdf |
Vgs(th) (Max) @ Id | 4V @ 250µA | Vgs (Max) | ±25V |
Technology | MOSFET (Metal Oxide) | Supplier Device Package | SOT-223-4 |
Series | QFET® | Rds On (Max) @ Id, Vgs | 350 mOhm @ 850mA, 10V |
Power Dissipation (Max) | 2W (Tc) | Packaging | Tape & Reel (TR) |
Package / Case | TO-261-4, TO-261AA | Other Names | FQT7N10TF-ND FQT7N10TFTR |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Manufacturer Standard Lead Time | 21 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 10V | FET Type | N-Channel |
FET Feature | - | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 100V | Detailed Description | N-Channel 100V 1.7A (Tc) 2W (Tc) Surface Mount SOT-223-4 |
Current - Continuous Drain (Id) @ 25°C | 1.7A (Tc) |
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