Part Number | FQT1N60CTF-WS | Manufacturer | AMI Semiconductor / ON Semiconductor |
---|---|---|---|
Description | MOSFET N-CH 600V 0.2A SOT-223-4 | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 138714 pcs | Data sheet | 1.FQT1N60CTF-WS.pdf2.FQT1N60CTF-WS.pdf |
Vgs(th) (Max) @ Id | 4V @ 250µA | Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) | Supplier Device Package | SOT-223-4 |
Series | QFET® | Rds On (Max) @ Id, Vgs | 11.5 Ohm @ 100mA, 10V |
Power Dissipation (Max) | 2.1W (Tc) | Packaging | Original-Reel® |
Package / Case | TO-261-4, TO-261AA | Other Names | FQT1N60CTF-WSDKR FQT1N60CTF_WSDKR FQT1N60CTF_WSDKR-ND |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Manufacturer Standard Lead Time | 14 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Input Capacitance (Ciss) (Max) @ Vds | 170pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 6.2nC @ 10V | FET Type | N-Channel |
FET Feature | - | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 600V | Detailed Description | N-Channel 600V 200mA (Tc) 2.1W (Tc) Surface Mount SOT-223-4 |
Current - Continuous Drain (Id) @ 25°C | 200mA (Tc) |
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