Part Number | TPN7R506NH,L1Q | Manufacturer | Toshiba Semiconductor and Storage |
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Description | MOSFET N-CH 60V 26A 8TSON | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 137537 pcs | Data sheet | TPN7R506NH,L1Q.pdf |
Vgs(th) (Max) @ Id | 4V @ 200µA | Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) | Supplier Device Package | 8-TSON Advance (3.3x3.3) |
Series | U-MOSVIII-H | Rds On (Max) @ Id, Vgs | 7.5 mOhm @ 13A, 10V |
Power Dissipation (Max) | 700mW (Ta), 42W (Tc) | Packaging | Tape & Reel (TR) |
Package / Case | 8-PowerVDFN | Other Names | TPN7R506NH,L1Q(M TPN7R506NHL1QTR |
Operating Temperature | 150°C (TJ) | Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 30V | Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
FET Type | N-Channel | FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 6.5V, 10V | Drain to Source Voltage (Vdss) | 60V |
Detailed Description | N-Channel 60V 26A (Tc) 700mW (Ta), 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3) | Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
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