Part Number | TPN1R603PL,L1Q | Manufacturer | Toshiba Semiconductor and Storage |
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Description | X35 PB-F POWER MOSFET TRANSISTOR | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 96480 pcs | Data sheet | TPN1R603PL,L1Q.pdf |
Vgs(th) (Max) @ Id | 10V @ 10µA | Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) | Supplier Device Package | 8-TSON Advance (3.3x3.3) |
Series | U-MOSIX-H | Rds On (Max) @ Id, Vgs | 1.2 mOhm @ 80A, 10V |
Power Dissipation (Max) | 104W (Tc) | Packaging | Tape & Reel (TR) |
Package / Case | 8-PowerVDFN | Other Names | TPN1R603PL,L1Q(M TPN1R603PLL1Q TPN1R603PLL1QTR |
Operating Temperature | 175°C (TJ) | Mounting Type | Surface Mount |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Input Capacitance (Ciss) (Max) @ Vds | 3900pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V | FET Type | N-Channel |
FET Feature | - | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Drain to Source Voltage (Vdss) | 30V | Detailed Description | N-Channel 30V 80A (Tc) 104W (Tc) Surface Mount 8-TSON Advance (3.3x3.3) |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
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TNT | www.TNT.com | From $35.00 basic shipping fee depend on zone and country. |