TK30E06N1,S1X

Toshiba Semiconductor and Storage

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Product Overview

Part Number:	TK30E06N1,S1X
Manufacturer/Brand:	Toshiba Semiconductor and Storage
Product description	MOSFET N-CH 60V 43A TO-220
Datasheets:	TK30E06N1,S1X.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	131343 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 131343 pcs

Reference Price (In US Dollars)

1 pcs: $0.41

50 pcs: $0.317

100 pcs: $0.276

500 pcs: $0.204

1000 pcs: $0.163

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Specifications of TK30E06N1,S1X

Part Number	TK30E06N1,S1X	Manufacturer	Toshiba Semiconductor and Storage
Description	MOSFET N-CH 60V 43A TO-220	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	131343 pcs	Data sheet	TK30E06N1,S1X.pdf
Vgs(th) (Max) @ Id	4V @ 200µA	Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	TO-220
Series	U-MOSVIII-H	Rds On (Max) @ Id, Vgs	15 mOhm @ 15A, 10V
Power Dissipation (Max)	53W (Tc)	Packaging	Tube
Package / Case	TO-220-3	Other Names	TK30E06N1,S1X(S TK30E06N1S1X
Operating Temperature	150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	1050pF @ 30V	Gate Charge (Qg) (Max) @ Vgs	16nC @ 10V
FET Type	N-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	10V	Drain to Source Voltage (Vdss)	60V
Detailed Description	N-Channel 60V 43A (Ta) 53W (Tc) Through Hole TO-220	Current - Continuous Drain (Id) @ 25°C	43A (Ta)

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TK30E06N1,S1X

Product Overview

Reference Price (In US Dollars)

Specifications of TK30E06N1,S1X

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