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HomeProductsDiscrete Semiconductor ProductsTransistors - Bipolar (BJT) - Single, Pre-BiasedRN2302,LF

RN2302,LF

Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Image may be representation. See specifications for product details.

Product Overview

Part Number: RN2302,LF
Manufacturer/Brand: Toshiba Semiconductor and Storage
Product description X34 PB-F USM TRANSISTOR PD 100MW
Datasheets: RN2302,LF.pdf
RoHs Status Lead free / RoHS Compliant
Stock Condition 1570413 pcs stock
Ship From Hong Kong
Shipment Way DHL/Fedex/TNT/UPS/EMS
In Stock 1570413 pcs
Reference Price (In US Dollars)
3000 pcs
$0.014
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Specifications of RN2302,LF

Part Number RN2302,LF Manufacturer Toshiba Semiconductor and Storage
Description X34 PB-F USM TRANSISTOR PD 100MW Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 1570413 pcs Data sheet RN2302,LF.pdf
Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Transistor Type PNP - Pre-Biased Supplier Device Package USM
Series - Resistor - Emitter Base (R2) 10 kOhms
Resistor - Base (R1) 10 kOhms Power - Max 100mW
Package / Case SC-70, SOT-323 Other Names RN2302LF
Mounting Type Surface Mount Manufacturer Standard Lead Time 16 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 200MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 100mW Surface Mount USM DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 5V
Current - Collector Cutoff (Max) 500nA Current - Collector (Ic) (Max) 100mA

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