TSM60NB190CI C0G

TSC (Taiwan Semiconductor)

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Product Overview

Part Number:	TSM60NB190CI C0G
Manufacturer/Brand:	TSC (Taiwan Semiconductor)
Product description	MOSFET N-CH 600V 18A ITO220
Datasheets:	TSM60NB190CI C0G.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	61277 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 61277 pcs

Reference Price (In US Dollars)

1 pcs: $1.183

10 pcs: $1.069

100 pcs: $0.859

500 pcs: $0.668

1000 pcs: $0.554

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Total:$1.183

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Specifications of TSM60NB190CI C0G

Part Number	TSM60NB190CI C0G	Manufacturer	TSC (Taiwan Semiconductor)
Description	MOSFET N-CH 600V 18A ITO220	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	61277 pcs	Data sheet	TSM60NB190CI C0G.pdf
Vgs(th) (Max) @ Id	4V @ 250µA	Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	ITO-220
Series	-	Rds On (Max) @ Id, Vgs	190 mOhm @ 6A, 10V
Power Dissipation (Max)	33.8W (Tc)	Packaging	Tube
Package / Case	TO-220-3 Full Pack, Isolated Tab	Other Names	TSM60NB190CI C0G-ND TSM60NB190CIC0G
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	24 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Input Capacitance (Ciss) (Max) @ Vds	1273pF @ 100V
Gate Charge (Qg) (Max) @ Vgs	31nC @ 10V	FET Type	N-Channel
FET Feature	-	Drive Voltage (Max Rds On, Min Rds On)	10V
Drain to Source Voltage (Vdss)	600V	Detailed Description	N-Channel 600V 18A (Tc) 33.8W (Tc) Through Hole ITO-220
Current - Continuous Drain (Id) @ 25°C	18A (Tc)

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TSM60NB190CI C0G

Product Overview

Reference Price (In US Dollars)

Specifications of TSM60NB190CI C0G

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