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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleSCT10N120

SCT10N120

STMicroelectronicsSTMicroelectronics
SCT10N120 Image
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Product Overview

Part Number: SCT10N120
Manufacturer/Brand: STMicroelectronics
Product description MOSFET N-CH 1.2KV TO247-3
Datasheets: 1.SCT10N120.pdf2.SCT10N120.pdf3.SCT10N120.pdf
RoHs Status Lead free / RoHS Compliant
Stock Condition 11331 pcs stock
Ship From Hong Kong
Shipment Way DHL/Fedex/TNT/UPS/EMS
In Stock 11331 pcs
Reference Price (In US Dollars)
1 pcs
$4.475
10 pcs
$4.114
100 pcs
$3.474
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Specifications of SCT10N120

Part Number SCT10N120 Manufacturer STMicroelectronics
Description MOSFET N-CH 1.2KV TO247-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 11331 pcs Data sheet 1.SCT10N120.pdf2.SCT10N120.pdf3.SCT10N120.pdf
Vgs(th) (Max) @ Id 3.5V @ 250µA Vgs (Max) +25V, -10V
Technology SiCFET (Silicon Carbide) Supplier Device Package HiP247™
Series - Rds On (Max) @ Id, Vgs 690 mOhm @ 6A, 20V
Power Dissipation (Max) 150W (Tc) Packaging Tube
Package / Case TO-247-3 Other Names 497-16597-5
Operating Temperature -55°C ~ 200°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 290pF @ 400V Gate Charge (Qg) (Max) @ Vgs 22nC @ 20V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 20V Drain to Source Voltage (Vdss) 1200V
Detailed Description N-Channel 1200V 12A (Tc) 150W (Tc) Through Hole HiP247™ Current - Continuous Drain (Id) @ 25°C 12A (Tc)

Shipment

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