RQ1C065UNTR

LAPIS Semiconductor

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Product Overview

Part Number:	RQ1C065UNTR
Manufacturer/Brand:	LAPIS Semiconductor
Product description	MOSFET N-CH 20V 6.5A TSMT8
Datasheets:	1.RQ1C065UNTR.pdf 2.RQ1C065UNTR.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	269256 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 269256 pcs

Reference Price (In US Dollars)

3000 pcs: $0.082

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Specifications of RQ1C065UNTR

Part Number	RQ1C065UNTR	Manufacturer	LAPIS Semiconductor
Description	MOSFET N-CH 20V 6.5A TSMT8	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	269256 pcs	Data sheet	1.RQ1C065UNTR.pdf 2.RQ1C065UNTR.pdf
Vgs(th) (Max) @ Id	1V @ 1mA	Vgs (Max)	±10V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	TSMT8
Series	-	Rds On (Max) @ Id, Vgs	22 mOhm @ 6.5A, 4.5V
Power Dissipation (Max)	700mW (Ta)	Packaging	Tape & Reel (TR)
Package / Case	8-SMD, Flat Lead	Other Names	RQ1C065UNTRTR RQ1C065UNTRTR-ND
Operating Temperature	150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	870pF @ 10V	Gate Charge (Qg) (Max) @ Vgs	11nC @ 4.5V
FET Type	N-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V	Drain to Source Voltage (Vdss)	20V
Detailed Description	N-Channel 20V 6.5A (Ta) 700mW (Ta) Surface Mount TSMT8	Current - Continuous Drain (Id) @ 25°C	6.5A (Ta)

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RQ1C065UNTR

Product Overview

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Specifications of RQ1C065UNTR

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