Part Number | R6009KNJTL | Manufacturer | LAPIS Semiconductor |
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Description | MOSFET N-CHANNEL 600V 9A TO263 | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 58894 pcs | Data sheet | 1.R6009KNJTL.pdf2.R6009KNJTL.pdf |
Vgs(th) (Max) @ Id | 5V @ 1mA | Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) | Supplier Device Package | TO-263 |
Series | - | Rds On (Max) @ Id, Vgs | 535 mOhm @ 2.8A, 10V |
Power Dissipation (Max) | 94W (Tc) | Packaging | Tape & Reel (TR) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Other Names | R6009KNJTLTR |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Manufacturer Standard Lead Time | 17 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Input Capacitance (Ciss) (Max) @ Vds | 540pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 16.5nC @ 10V | FET Type | N-Channel |
FET Feature | Schottky Diode (Isolated) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 600V | Detailed Description | N-Channel 600V 9A (Tc) 94W (Tc) Surface Mount TO-263 |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
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