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HomeProductsDiscrete Semiconductor ProductsTransistors - Bipolar (BJT) - Single2SA2007E

2SA2007E

LAPIS SemiconductorLAPIS Semiconductor
2SA2007E Image
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Product Overview

Part Number: 2SA2007E
Manufacturer/Brand: LAPIS Semiconductor
Product description TRANS PNP 60V 12A TO220FN
Datasheets: 2SA2007E.pdf
RoHs Status Lead free / RoHS Compliant
Stock Condition 70288 pcs stock
Ship From Hong Kong
Shipment Way DHL/Fedex/TNT/UPS/EMS
In Stock 70288 pcs
Reference Price (In US Dollars)
500 pcs
$0.492
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Specifications of 2SA2007E

Part Number 2SA2007E Manufacturer LAPIS Semiconductor
Description TRANS PNP 60V 12A TO220FN Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 70288 pcs Data sheet 2SA2007E.pdf
Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 500mV @ 400mA, 8A
Transistor Type PNP Supplier Device Package TO-220FN
Series - Power - Max 25W
Packaging Bulk Package / Case TO-220-3 Full Pack
Operating Temperature 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 80MHz Detailed Description Bipolar (BJT) Transistor PNP 60V 12A 80MHz 25W Through Hole TO-220FN
DC Current Gain (hFE) (Min) @ Ic, Vce 320 @ 2A, 2V Current - Collector Cutoff (Max) 10µA (ICBO)
Current - Collector (Ic) (Max) 12A

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