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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleSIHB12N50C-E3

SIHB12N50C-E3

Electro-Films (EFI) / VishayElectro-Films (EFI) / Vishay
SIHB12N50C-E3 Image
Image may be representation. See specifications for product details.

Product Overview

Part Number: SIHB12N50C-E3
Manufacturer/Brand: Electro-Films (EFI) / Vishay
Product description MOSFET N-CH 500V 12A D2PAK
Datasheets: SIHB12N50C-E3.pdf
RoHs Status Lead free / RoHS Compliant
Stock Condition 35800 pcs stock
Ship From Hong Kong
Shipment Way DHL/Fedex/TNT/UPS/EMS
In Stock 35800 pcs
Reference Price (In US Dollars)
1000 pcs
$1.083
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Specifications of SIHB12N50C-E3

Part Number SIHB12N50C-E3 Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 500V 12A D2PAK Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 35800 pcs Data sheet SIHB12N50C-E3.pdf
Vgs(th) (Max) @ Id 5V @ 250µA Vgs (Max) ±30V
Technology MOSFET (Metal Oxide) Supplier Device Package D²PAK (TO-263)
Series - Rds On (Max) @ Id, Vgs 555 mOhm @ 4A, 10V
Power Dissipation (Max) 208W (Tc) Packaging Tape & Reel (TR)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 18 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 1375pF @ 25V Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 500V
Detailed Description N-Channel 500V 12A (Tc) 208W (Tc) Surface Mount D²PAK (TO-263) Current - Continuous Drain (Id) @ 25°C 12A (Tc)

Shipment

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FEDEX www.FedEx.com From $35.00 basic shipping fee depend on zone and country.
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UPS www.UPS.com From $35.00 basic shipping fee depend on zone and country.
TNT www.TNT.com From $35.00 basic shipping fee depend on zone and country.

★ Delivery time will need 2-4 Days to most of country all over the world by DHL/UPS/FEDEX/TNT.

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