SI8809EDB-T2-E1

Electro-Films (EFI) / Vishay

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Product Overview

Part Number:	SI8809EDB-T2-E1
Manufacturer/Brand:	Electro-Films (EFI) / Vishay
Product description	MOSFET P-CH 20V 1.9A MICROFOOT
Datasheets:	SI8809EDB-T2-E1.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	4869 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 4869 pcs

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Specifications of SI8809EDB-T2-E1

Part Number	SI8809EDB-T2-E1	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET P-CH 20V 1.9A MICROFOOT	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4869 pcs	Data sheet	SI8809EDB-T2-E1.pdf
Vgs(th) (Max) @ Id	900mV @ 250µA	Vgs (Max)	±8V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	4-Microfoot
Series	TrenchFET®	Rds On (Max) @ Id, Vgs	90 mOhm @ 1.5A, 4.5V
Power Dissipation (Max)	500mW (Ta)	Packaging	Tape & Reel (TR)
Package / Case	4-XFBGA	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Gate Charge (Qg) (Max) @ Vgs	15nC @ 8V
FET Type	P-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V	Drain to Source Voltage (Vdss)	20V
Detailed Description	P-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot	Current - Continuous Drain (Id) @ 25°C	-

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SI8809EDB-T2-E1

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Specifications of SI8809EDB-T2-E1

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