SI7888DP-T1-GE3

Electro-Films (EFI) / Vishay

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Product Overview

Part Number:	SI7888DP-T1-GE3
Manufacturer/Brand:	Electro-Films (EFI) / Vishay
Product description	MOSFET N-CH 30V 9.4A PPAK SO-8
Datasheets:	SI7888DP-T1-GE3.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	4732 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 4732 pcs

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Specifications of SI7888DP-T1-GE3

Part Number	SI7888DP-T1-GE3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N-CH 30V 9.4A PPAK SO-8	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4732 pcs	Data sheet	SI7888DP-T1-GE3.pdf
Vgs(th) (Max) @ Id	2V @ 250µA	Vgs (Max)	±12V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	PowerPAK® SO-8
Series	TrenchFET®	Rds On (Max) @ Id, Vgs	12 mOhm @ 12.4A, 10V
Power Dissipation (Max)	1.8W (Ta)	Packaging	Tape & Reel (TR)
Package / Case	PowerPAK® SO-8	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Gate Charge (Qg) (Max) @ Vgs	10.5nC @ 5V
FET Type	N-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Drain to Source Voltage (Vdss)	30V
Detailed Description	N-Channel 30V 9.4A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8	Current - Continuous Drain (Id) @ 25°C	9.4A (Ta)

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SI7888DP-T1-GE3

Product Overview

Specifications of SI7888DP-T1-GE3

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