SI4190DY-T1-GE3

Electro-Films (EFI) / Vishay

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Product Overview

Part Number:	SI4190DY-T1-GE3
Manufacturer/Brand:	Electro-Films (EFI) / Vishay
Product description	MOSFET N-CH 100V 20A 8-SOIC
Datasheets:	SI4190DY-T1-GE3.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	4806 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 4806 pcs

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Specifications of SI4190DY-T1-GE3

Part Number	SI4190DY-T1-GE3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET N-CH 100V 20A 8-SOIC	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4806 pcs	Data sheet	SI4190DY-T1-GE3.pdf
Vgs(th) (Max) @ Id	2.8V @ 250µA	Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	8-SO
Series	TrenchFET®	Rds On (Max) @ Id, Vgs	8.8 mOhm @ 15A, 10V
Power Dissipation (Max)	3.5W (Ta), 7.8W (Tc)	Packaging	Cut Tape (CT)
Package / Case	8-SOIC (0.154", 3.90mm Width)	Other Names	SI4190DY-T1-GE3CT
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	2000pF @ 50V	Gate Charge (Qg) (Max) @ Vgs	58nC @ 10V
FET Type	N-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Drain to Source Voltage (Vdss)	100V
Detailed Description	N-Channel 100V 20A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SO	Current - Continuous Drain (Id) @ 25°C	20A (Tc)

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SI4190DY-T1-GE3

Product Overview

Specifications of SI4190DY-T1-GE3

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