SI2327DS-T1-GE3

Electro-Films (EFI) / Vishay

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Product Overview

Part Number:	SI2327DS-T1-GE3
Manufacturer/Brand:	Electro-Films (EFI) / Vishay
Product description	MOSFET P-CH 200V 0.38A SOT-23
Datasheets:	SI2327DS-T1-GE3.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	5553 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 5553 pcs

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Specifications of SI2327DS-T1-GE3

Part Number	SI2327DS-T1-GE3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET P-CH 200V 0.38A SOT-23	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5553 pcs	Data sheet	SI2327DS-T1-GE3.pdf
Vgs(th) (Max) @ Id	4.5V @ 250µA	Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	SOT-23-3 (TO-236)
Series	TrenchFET®	Rds On (Max) @ Id, Vgs	2.35 Ohm @ 500mA, 10V
Power Dissipation (Max)	750mW (Ta)	Packaging	Original-Reel®
Package / Case	TO-236-3, SC-59, SOT-23-3	Other Names	SI2327DS-T1-GE3DKR
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	510pF @ 25V	Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
FET Type	P-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V	Drain to Source Voltage (Vdss)	200V
Detailed Description	P-Channel 200V 380mA (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)	Current - Continuous Drain (Id) @ 25°C	380mA (Ta)

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SI2327DS-T1-GE3

Product Overview

Specifications of SI2327DS-T1-GE3

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