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HomeProductsDiscrete Semiconductor ProductsTransistors - Bipolar (BJT) - Arrays, Pre-BiasedSSVMUN5312DW1T2G

SSVMUN5312DW1T2G

AMI Semiconductor / ON SemiconductorAMI Semiconductor / ON Semiconductor
SSVMUN5312DW1T2G Image
Image may be representation. See specifications for product details.

Product Overview

Part Number: SSVMUN5312DW1T2G
Manufacturer/Brand: AMI Semiconductor / ON Semiconductor
Product description TRANS BRT DUAL 100MA 50V SOT363
Datasheets:
RoHs Status Lead free / RoHS Compliant
Stock Condition 530278 pcs stock
Ship From Hong Kong
Shipment Way DHL/Fedex/TNT/UPS/EMS
In Stock 530278 pcs
Reference Price (In US Dollars)
3000 pcs
$0.038
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Specifications of SSVMUN5312DW1T2G

Part Number SSVMUN5312DW1T2G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS BRT DUAL 100MA 50V SOT363 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 530278 pcs Data sheet
Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual) Supplier Device Package SC-88/SC70-6/SOT-363
Series - Resistor - Emitter Base (R2) 22 kOhms
Resistor - Base (R1) 22 kOhms Power - Max 187mW
Packaging Tape & Reel (TR) Package / Case 6-TSSOP, SC-88, SOT-363
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 40 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition - Detailed Description Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SC-88/SC70-6/SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA Base Part Number MUN53**DW1

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