NVD4809NHT4G

AMI Semiconductor / ON Semiconductor

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Product Overview

Part Number:	NVD4809NHT4G
Manufacturer/Brand:	AMI Semiconductor / ON Semiconductor
Product description	MOSFET N-CH 30V 58A DPAK
Datasheets:	NVD4809NHT4G.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	5670 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 5670 pcs

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Specifications of NVD4809NHT4G

Part Number	NVD4809NHT4G	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 30V 58A DPAK	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5670 pcs	Data sheet	NVD4809NHT4G.pdf
Vgs(th) (Max) @ Id	2.5V @ 250µA	Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	DPAK
Series	-	Rds On (Max) @ Id, Vgs	9 mOhm @ 30A, 10V
Power Dissipation (Max)	1.3W (Ta), 52W (Tc)	Packaging	Tape & Reel (TR)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63	Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Input Capacitance (Ciss) (Max) @ Vds	2155pF @ 12V
Gate Charge (Qg) (Max) @ Vgs	44nC @ 11.5V	FET Type	N-Channel
FET Feature	-	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 11.5V
Drain to Source Voltage (Vdss)	30V	Detailed Description	N-Channel 30V 9A (Ta), 58A (Tc) 1.3W (Ta), 52W (Tc) Surface Mount DPAK
Current - Continuous Drain (Id) @ 25°C	9A (Ta), 58A (Tc)

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NVD4809NHT4G

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