FQP7N80C

AMI Semiconductor / ON Semiconductor

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Product Overview

Part Number:	FQP7N80C
Manufacturer/Brand:	AMI Semiconductor / ON Semiconductor
Product description	MOSFET N-CH 800V 6.6A TO-220
Datasheets:	1.FQP7N80C.pdf 2.FQP7N80C.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	100344 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 100344 pcs

Reference Price (In US Dollars)

1 pcs: $0.778

10 pcs: $0.704

100 pcs: $0.566

500 pcs: $0.44

1000 pcs: $0.365

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Specifications of FQP7N80C

Part Number	FQP7N80C	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET N-CH 800V 6.6A TO-220	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	100344 pcs	Data sheet	1.FQP7N80C.pdf 2.FQP7N80C.pdf
Vgs(th) (Max) @ Id	5V @ 250µA	Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	TO-220-3
Series	QFET®	Rds On (Max) @ Id, Vgs	1.9 Ohm @ 3.3A, 10V
Power Dissipation (Max)	167W (Tc)	Packaging	Tube
Package / Case	TO-220-3	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	6 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	1680pF @ 25V	Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
FET Type	N-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	10V	Drain to Source Voltage (Vdss)	800V
Detailed Description	N-Channel 800V 6.6A (Tc) 167W (Tc) Through Hole TO-220-3	Current - Continuous Drain (Id) @ 25°C	6.6A (Tc)

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FQP7N80C

Product Overview

Reference Price (In US Dollars)

Specifications of FQP7N80C

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