Part Number | FQD2N60CTM | Manufacturer | AMI Semiconductor / ON Semiconductor |
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Description | MOSFET N-CH 600V 1.9A DPAK | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 147038 pcs | Data sheet | 1.FQD2N60CTM.pdf2.FQD2N60CTM.pdf |
Vgs(th) (Max) @ Id | 4V @ 250µA | Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) | Supplier Device Package | D-Pak |
Series | QFET® | Rds On (Max) @ Id, Vgs | 4.7 Ohm @ 950mA, 10V |
Power Dissipation (Max) | 2.5W (Ta), 44W (Tc) | Packaging | Tape & Reel (TR) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | Other Names | FQD2N60CTM-ND FQD2N60CTMTR |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Manufacturer Standard Lead Time | 23 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Input Capacitance (Ciss) (Max) @ Vds | 235pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V | FET Type | N-Channel |
FET Feature | - | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 600V | Detailed Description | N-Channel 600V 1.9A (Tc) 2.5W (Ta), 44W (Tc) Surface Mount D-Pak |
Current - Continuous Drain (Id) @ 25°C | 1.9A (Tc) |
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