Part Number | FDFME2P823ZT | Manufacturer | AMI Semiconductor / ON Semiconductor |
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Description | MOSFET P-CH 20V 2.6A 6MICROFET | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 5417 pcs | Data sheet | FDFME2P823ZT.pdf |
Vgs(th) (Max) @ Id | 1V @ 250µA | Vgs (Max) | ±8V |
Technology | MOSFET (Metal Oxide) | Supplier Device Package | 6-MicroFET (1.6x1.6) |
Series | PowerTrench® | Rds On (Max) @ Id, Vgs | 142 mOhm @ 2.3A, 4.5V |
Power Dissipation (Max) | 1.4W (Ta) | Packaging | Tape & Reel (TR) |
Package / Case | 6-UFDFN Exposed Pad | Other Names | FDFME2P823ZT-ND FDFME2P823ZTTR |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 405pF @ 10V | Gate Charge (Qg) (Max) @ Vgs | 7.7nC @ 4.5V |
FET Type | P-Channel | FET Feature | Schottky Diode (Isolated) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | Drain to Source Voltage (Vdss) | 20V |
Detailed Description | P-Channel 20V 2.6A (Ta) 1.4W (Ta) Surface Mount 6-MicroFET (1.6x1.6) | Current - Continuous Drain (Id) @ 25°C | 2.6A (Ta) |
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