Part Number | FDFM2N111 | Manufacturer | AMI Semiconductor / ON Semiconductor |
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Description | MOSFET N-CH 20V 4A 3X3 MLP | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 143476 pcs | Data sheet | FDFM2N111.pdf |
Vgs(th) (Max) @ Id | 1.5V @ 250µA | Vgs (Max) | ±12V |
Technology | MOSFET (Metal Oxide) | Supplier Device Package | MicroFET 3x3mm |
Series | PowerTrench® | Rds On (Max) @ Id, Vgs | 100 mOhm @ 4A, 4.5V |
Power Dissipation (Max) | 1.7W (Ta) | Packaging | Tape & Reel (TR) |
Package / Case | 6-MLP, Power33 | Other Names | FDFM2N111-ND FDFM2N111TR |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Manufacturer Standard Lead Time | 39 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Input Capacitance (Ciss) (Max) @ Vds | 273pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs | 3.8nC @ 4.5V | FET Type | N-Channel |
FET Feature | Schottky Diode (Isolated) | Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Drain to Source Voltage (Vdss) | 20V | Detailed Description | N-Channel 20V 4A (Ta) 1.7W (Ta) Surface Mount MicroFET 3x3mm |
Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
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