FDC636P

AMI Semiconductor / ON Semiconductor

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Product Overview

Part Number:	FDC636P
Manufacturer/Brand:	AMI Semiconductor / ON Semiconductor
Product description	MOSFET P-CH 20V 2.8A SSOT-6
Datasheets:	FDC636P.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	5198 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 5198 pcs

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Specifications of FDC636P

Part Number	FDC636P	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	MOSFET P-CH 20V 2.8A SSOT-6	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5198 pcs	Data sheet	FDC636P.pdf
Vgs(th) (Max) @ Id	1V @ 250µA	Vgs (Max)	±8V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	SuperSOT™-6
Series	-	Rds On (Max) @ Id, Vgs	130 mOhm @ 2.8A, 4.5V
Power Dissipation (Max)	1.6W (Ta)	Packaging	Tape & Reel (TR)
Package / Case	SOT-23-6 Thin, TSOT-23-6	Other Names	FDC636P-ND FDC636PTR
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds	390pF @ 10V	Gate Charge (Qg) (Max) @ Vgs	8.5nC @ 4.5V
FET Type	P-Channel	FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V	Drain to Source Voltage (Vdss)	20V
Detailed Description	P-Channel 20V 2.8A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6	Current - Continuous Drain (Id) @ 25°C	2.8A (Ta)

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FDC636P

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