X-Fab expands SiC capacity, adds in-house epitaxy capabilities

The pure-play foundry has added internal SiC epitaxy capabilities to its offering, meaning more of the process chain is accessed through a single source. 

The firm says growing demand has necessitated it expand SiC capacity, which has now reached 26k wafers per month capacity at its Lubbock facility.

Through the epitaxy toolset, which comes with an option for dual epi-layer implementations, X-Fab claims it will be able to achieve higher uniformity of the epitaxial layer, with performance benefits passed along to the end products.

The company is also undertaking further investments in characterization tools aiming to improve the epi-layer quality, and is working with substrate manufacturers to secure long-term continuity of supply for essential raw materials.

The company envisages greater demand for SiC devices to support applications in electric vehicles and advanced power management systems.

Customers will be able to import their SiC projects into X-Fab’s automotive-qualified fab environment.

Ed Pascasio, CFO at X-Fab Texas says “X-Fab’s commitment to wide bandgap technology is truly unmatched, and we have already demonstrated our SiC onboarding credentials, with numerous high-volume projects for diodes, mosfets and jfets all currently running, and these are paving the way towards mass market adoption,”

“Our engineering team has direct influence across the whole process, and this will translate into best-value performance and quality as well as more attractive price points,”