RN4982FE,LF(CB

Toshiba Semiconductor and Storage

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Product Overview

Part Number:	RN4982FE,LF(CB
Manufacturer/Brand:	Toshiba Semiconductor and Storage
Product description	TRANS NPN/PNP PREBIAS 0.1W ES6
Datasheets:	RN4982FE,LF(CB.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	2326051 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 2326051 pcs

Reference Price (In US Dollars)

4000 pcs: $0.017

8000 pcs: $0.015

12000 pcs: $0.013

28000 pcs: $0.012

100000 pcs: $0.01

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Specifications of RN4982FE,LF(CB

Part Number	RN4982FE,LF(CB	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS NPN/PNP PREBIAS 0.1W ES6	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	2326051 pcs	Data sheet	RN4982FE,LF(CB.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)	Supplier Device Package	ES6
Series	-	Resistor - Emitter Base (R2)	10 kOhms
Resistor - Base (R1)	10 kOhms	Power - Max	100mW
Packaging	Tape & Reel (TR)	Package / Case	SOT-563, SOT-666
Other Names	RN4982FE(T5L,F,T) RN4982FE(T5LFT)TR RN4982FE(T5LFT)TR-ND RN4982FE,LF(CT RN4982FELF(CBTR RN4982FELF(CTTR RN4982FELF(CTTR-ND	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	16 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	250MHz
Detailed Description	Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6	DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 10mA, 5V
Current - Collector Cutoff (Max)	100nA (ICBO)	Current - Collector (Ic) (Max)	100mA

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RN4982FE,LF(CB

Product Overview

Reference Price (In US Dollars)

Specifications of RN4982FE,LF(CB

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AFTER-SALES GUARANTEE

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