2SK3906(Q)

Toshiba Semiconductor and Storage

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Product Overview

Part Number:	2SK3906(Q)
Manufacturer/Brand:	Toshiba Semiconductor and Storage
Product description	MOSFET N-CH 600V 20A TO-3PN
Datasheets:	1.2SK3906(Q).pdf 2.2SK3906(Q).pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	5124 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 5124 pcs

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Specifications of 2SK3906(Q)

Part Number	2SK3906(Q)	Manufacturer	Toshiba Semiconductor and Storage
Description	MOSFET N-CH 600V 20A TO-3PN	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5124 pcs	Data sheet	1.2SK3906(Q).pdf 2.2SK3906(Q).pdf
Vgs(th) (Max) @ Id	4V @ 1mA	Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)	Supplier Device Package	TO-3P(N)
Series	-	Rds On (Max) @ Id, Vgs	330 mOhm @ 10A, 10V
Power Dissipation (Max)	150W (Tc)	Packaging	Bulk
Package / Case	TO-3P-3, SC-65-3	Operating Temperature	150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Input Capacitance (Ciss) (Max) @ Vds	4250pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	60nC @ 10V	FET Type	N-Channel
FET Feature	-	Drive Voltage (Max Rds On, Min Rds On)	10V
Drain to Source Voltage (Vdss)	600V	Detailed Description	N-Channel 600V 20A (Ta) 150W (Tc) Through Hole TO-3P(N)
Current - Continuous Drain (Id) @ 25°C	20A (Ta)

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2SK3906(Q)

Product Overview

Specifications of 2SK3906(Q)

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