Part Number | TK35N65W5,S1F | Manufacturer | Toshiba Semiconductor and Storage |
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Description | MOSFET N-CH 650V 35A TO-247 | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 11561 pcs | Data sheet | TK35N65W5,S1F.pdf |
Vgs(th) (Max) @ Id | 4.5V @ 2.1mA | Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) | Supplier Device Package | TO-247 |
Series | DTMOSIV | Rds On (Max) @ Id, Vgs | 95 mOhm @ 17.5A, 10V |
Power Dissipation (Max) | 270W (Tc) | Packaging | Tube |
Package / Case | TO-247-3 | Other Names | TK35N65W5,S1F(S TK35N65W5,S1F-ND TK35N65W5S1F |
Operating Temperature | 150°C (TJ) | Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 4100pF @ 300V | Gate Charge (Qg) (Max) @ Vgs | 115nC @ 10V |
FET Type | N-Channel | FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Drain to Source Voltage (Vdss) | 650V |
Detailed Description | N-Channel 650V 35A (Ta) 270W (Tc) Through Hole TO-247 | Current - Continuous Drain (Id) @ 25°C | 35A (Ta) |
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