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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleRW1E015RPT2R

RW1E015RPT2R

LAPIS SemiconductorLAPIS Semiconductor
RW1E015RPT2R Image
Image may be representation. See specifications for product details.

Product Overview

Part Number: RW1E015RPT2R
Manufacturer/Brand: LAPIS Semiconductor
Product description MOSFET P-CH 30V 1.5A WEMT6
Datasheets: RW1E015RPT2R.pdf
RoHs Status Lead free / RoHS Compliant
Stock Condition 760638 pcs stock
Ship From Hong Kong
Shipment Way DHL/Fedex/TNT/UPS/EMS
In Stock 760638 pcs
Reference Price (In US Dollars)
8000 pcs
$0.029
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Specifications of RW1E015RPT2R

Part Number RW1E015RPT2R Manufacturer LAPIS Semiconductor
Description MOSFET P-CH 30V 1.5A WEMT6 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 760638 pcs Data sheet RW1E015RPT2R.pdf
Vgs(th) (Max) @ Id 2.5V @ 1mA Vgs (Max) ±20V
Technology MOSFET (Metal Oxide) Supplier Device Package 6-WEMT
Series - Rds On (Max) @ Id, Vgs 160 mOhm @ 1.5A, 10V
Power Dissipation (Max) 400mW (Ta) Packaging Tape & Reel (TR)
Package / Case SOT-563, SOT-666 Other Names RW1E015RPT2RTR
Operating Temperature 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 230pF @ 10V Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 10V
FET Type P-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Drain to Source Voltage (Vdss) 30V
Detailed Description P-Channel 30V 1.5A (Ta) 400mW (Ta) Surface Mount 6-WEMT Current - Continuous Drain (Id) @ 25°C 1.5A (Ta)

Shipment

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