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HomeProductsDiscrete Semiconductor ProductsTransistors - Bipolar (BJT) - Arrays, Pre-BiasedEMF8T2R

EMF8T2R

LAPIS SemiconductorLAPIS Semiconductor
EMF8T2R Image
Image may be representation. See specifications for product details.

Product Overview

Part Number: EMF8T2R
Manufacturer/Brand: LAPIS Semiconductor
Product description TRANS NPN PREBIAS/NPN 0.15W EMT6
Datasheets: EMF8T2R.pdf
RoHs Status Lead free / RoHS Compliant
Stock Condition 473478 pcs stock
Ship From Hong Kong
Shipment Way DHL/Fedex/TNT/UPS/EMS
In Stock 473478 pcs
Reference Price (In US Dollars)
8000 pcs
$0.05
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Specifications of EMF8T2R

Part Number EMF8T2R Manufacturer LAPIS Semiconductor
Description TRANS NPN PREBIAS/NPN 0.15W EMT6 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 473478 pcs Data sheet EMF8T2R.pdf
Voltage - Collector Emitter Breakdown (Max) 50V, 12V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
Transistor Type 1 NPN Pre-Biased, 1 NPN Supplier Device Package EMT6
Series - Resistor - Emitter Base (R2) 47 kOhms
Resistor - Base (R1) 47 kOhms Power - Max 150mW
Packaging Tape & Reel (TR) Package / Case SOT-563, SOT-666
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 250MHz, 320MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 NPN 50V, 12V 100mA, 500mA 250MHz, 320MHz 150mW Surface Mount EMT6 DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA, 5V / 270 @ 10mA, 2V
Current - Collector Cutoff (Max) 500nA Current - Collector (Ic) (Max) 100mA, 500mA

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