Part Number | SI9407BDY-T1-GE3 | Manufacturer | Electro-Films (EFI) / Vishay |
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Description | MOSFET P-CH 60V 4.7A 8-SOIC | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 151174 pcs | Data sheet | SI9407BDY-T1-GE3.pdf |
Vgs(th) (Max) @ Id | 3V @ 250µA | Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) | Supplier Device Package | 8-SO |
Series | TrenchFET® | Rds On (Max) @ Id, Vgs | 120 mOhm @ 3.2A, 10V |
Power Dissipation (Max) | 2.4W (Ta), 5W (Tc) | Packaging | Tape & Reel (TR) |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | Other Names | SI9407BDY-T1-GE3TR SI9407BDYT1GE3 |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Manufacturer Standard Lead Time | 33 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Input Capacitance (Ciss) (Max) @ Vds | 600pF @ 30V |
Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V | FET Type | P-Channel |
FET Feature | - | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Drain to Source Voltage (Vdss) | 60V | Detailed Description | P-Channel 60V 4.7A (Tc) 2.4W (Ta), 5W (Tc) Surface Mount 8-SO |
Current - Continuous Drain (Id) @ 25°C | 4.7A (Tc) |
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