Part Number | EPC2108 | Manufacturer | EPC |
---|---|---|---|
Description | MOSFET 3 N-CH 60V/100V 9BGA | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 56487 pcs | Data sheet | EPC2108.pdf |
Vgs(th) (Max) @ Id | 2.5V @ 100µA, 2.5V @ 20µA | Supplier Device Package | 9-BGA (1.35x1.35) |
Series | eGaN® | Rds On (Max) @ Id, Vgs | 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V |
Power - Max | - | Packaging | Tape & Reel (TR) |
Package / Case | 9-VFBGA | Other Names | 917-1169-2 |
Operating Temperature | -40°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Manufacturer Standard Lead Time | 14 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Input Capacitance (Ciss) (Max) @ Vds | 22pF @ 30V, 7pF @ 30V |
Gate Charge (Qg) (Max) @ Vgs | 0.22nC @ 5V, 0.044nC @ 5V | FET Type | 3 N-Channel (Half Bridge + Synchronous Bootstrap) |
FET Feature | GaNFET (Gallium Nitride) | Drain to Source Voltage (Vdss) | 60V, 100V |
Detailed Description | Mosfet Array 3 N-Channel (Half Bridge + Synchronous Bootstrap) 60V, 100V 1.7A, 500mA Surface Mount 9-BGA (1.35x1.35) | Current - Continuous Drain (Id) @ 25°C | 1.7A, 500mA |
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