UF3SC SiC FETs with <10 mΩ RDS(on)
UF3SC SiC FETs with <10 mΩ RDS(on)
UnitedSiC's UF3SC delivers unprecedented levels of performance and efficiency for use in high-power applications
UnitedSiC's UF3SC SiC FETs with RDS(ON) levels of 7 mΩ at 650 V and 10 mΩ at 1200 V deliver unprecedented levels of performance and efficiency for use in high power. These high-performance SiC FET devices are based on a unique cascode circuit configuration in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allow for a true drop-in replacement to Si IGBTs, Si FETs, SiC MOSFETs, or Si superjunction devices. Available in the TO-247-4L package, these devices exhibit ultra-low gate charge and exceptional reverse recovery characteristics, making them ideal for switching inductive loads and any application requiring standard gate drive.
Features
- Typical RDS(on) of 6.7 mΩ and 8.6 mΩ
- Maximum operating temperature of +175°C
- Excellent reverse recovery
- Low gate charge
- Low intrinsic capacitance
- ESD protected, HBM class 2
- TO247-4L kelvin package
Applications
- Electric vehicle (EV) inverters
- High-power DC/DC converters
- High-current battery chargers
- Solid-state circuit protection (breakers)
- PFC modules
- Motor drives
UF3SC SiC FETs with <10 mΩ RDS(on)
| Image | Manufacturer Part Number | Description | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Available Quantity | View Details | |
|---|---|---|---|---|---|---|---|---|
 |  | UF3SC065007K4S | MOSFET N-CH 650V 120A TO247-4 | SiCFET (Cascode SiCJFET) | 650V | 120A (Tc) | 30 - Immediate | View Details |