GD3100 IGBT Gate Drive IC
NXP's IGBT gate drive IC is ISO26262 ASIL D function safety certified with failsafe control of both low- and high-voltage domains
NXP's MC33GD3100 is an advanced, single-channel gate driver for IGBTs and SiC power MOSFETs. It features integrated galvanic isolation, low on-resistance drive transistors (which provide high charging and discharging current), low dynamic saturation voltage, and rail-to-rail gate voltage control for cost and space savings. Current and temperature sensing features minimize IGBT stress during faults. Accurate and configurable under voltage lockout (UVLO) provides protection while ensuring sufficient gate drive voltage headroom. The MC33GD3100 autonomously manages severe faults then reports the faults and status via an INTB pin and an SPI interface. It is capable of directly driving gates of most IGBTs and SiC MOSFETs. Self-test, control, and protection functions are included for the design of high-reliability ASIL C/D systems.
Features
- Functional safety: ISO 26262 ASIL D highest level of safety certification
- Cycle-by-cycle closed-loop gate monitor
- Power supply, analog, and digital self-check
- Enforceable deadtime control
- Separate fail-safety pins
- Rapid shut down of IGBT or SiC devices
- SPI programmable for flexibility
- Can be configured for use with any IGBT and SiC manufacturer
- Highly integrated for lower BOM cost and small footprint
- Current sense
- Temperature sense
- VDE-SAT
- Segmented drive for gate wave-shaping
- Two-level turn-off with soft shutdown
- Active Miller clamp
Applications
- Automotive
- Hybrid full electric vehicle motor drive inverters
- Electric vehicle DC-to-DC boost circuits
- Charging stations
GD3100 IGBT Gate Drive ICs
GD3100 IGBT Gate Drive IC Evaluation Boards