SI8469DB-T2-E1

Electro-Films (EFI) / Vishay

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Product Overview

Part Number:	SI8469DB-T2-E1
Manufacturer/Brand:	Electro-Films (EFI) / Vishay
Product description	MOSFET P-CH 8V 3.6A MICRO
Datasheets:	SI8469DB-T2-E1.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	4290 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 4290 pcs

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Specifications of SI8469DB-T2-E1

Part Number	SI8469DB-T2-E1	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET P-CH 8V 3.6A MICRO	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4290 pcs	Data sheet	SI8469DB-T2-E1.pdf
Vgs(th) (Max) @ Id	800mV @ 250µA	Vgs (Max)	±5V
Technology	MOSFET (Metal Oxide)	Series	TrenchFET®
Rds On (Max) @ Id, Vgs	64 mOhm @ 1.5A, 4.5V	Power Dissipation (Max)	780mW (Ta), 1.8W (Tc)
Packaging	Cut Tape (CT)	Package / Case	4-UFBGA
Other Names	SI8469DB-T2-E1CT	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Input Capacitance (Ciss) (Max) @ Vds	900pF @ 4V
Gate Charge (Qg) (Max) @ Vgs	17nC @ 4.5V	FET Type	P-Channel
FET Feature	-	Drive Voltage (Max Rds On, Min Rds On)	4.5V
Drain to Source Voltage (Vdss)	8V	Detailed Description	P-Channel 8V 4.6A (Ta) 780mW (Ta), 1.8W (Tc) Surface Mount
Current - Continuous Drain (Id) @ 25°C	4.6A (Ta)

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SI8469DB-T2-E1

Product Overview

Specifications of SI8469DB-T2-E1

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