SI5975DC-T1-GE3

Electro-Films (EFI) / Vishay

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Product Overview

Part Number:	SI5975DC-T1-GE3
Manufacturer/Brand:	Electro-Films (EFI) / Vishay
Product description	MOSFET 2P-CH 12V 3.1A CHIPFET
Datasheets:	SI5975DC-T1-GE3.pdf
RoHs Status	Lead free / RoHS Compliant
Stock Condition	5232 pcs stock
Ship From	Hong Kong
Shipment Way	DHL/Fedex/TNT/UPS/EMS

In Stock 5232 pcs

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Specifications of SI5975DC-T1-GE3

Part Number	SI5975DC-T1-GE3	Manufacturer	Electro-Films (EFI) / Vishay
Description	MOSFET 2P-CH 12V 3.1A CHIPFET	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5232 pcs	Data sheet	SI5975DC-T1-GE3.pdf
Vgs(th) (Max) @ Id	450mV @ 1mA (Min)	Supplier Device Package	1206-8 ChipFET™
Series	TrenchFET®	Rds On (Max) @ Id, Vgs	86 mOhm @ 3.1A, 4.5V
Power - Max	1.1W	Packaging	Tape & Reel (TR)
Package / Case	8-SMD, Flat Lead	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Input Capacitance (Ciss) (Max) @ Vds	-
Gate Charge (Qg) (Max) @ Vgs	9nC @ 4.5V	FET Type	2 P-Channel (Dual)
FET Feature	Logic Level Gate	Drain to Source Voltage (Vdss)	12V
Detailed Description	Mosfet Array 2 P-Channel (Dual) 12V 3.1A 1.1W Surface Mount 1206-8 ChipFET™	Current - Continuous Drain (Id) @ 25°C	3.1A

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SI5975DC-T1-GE3

Product Overview

Specifications of SI5975DC-T1-GE3

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